Stopping and Range of Ions in Matter

The Stopping and Range of Ions in Matter
Developer(s) James F. Ziegler
Initial release 1983 (1983)
Stable release
SRIM-2008
Preview release
SRIM-2013
Development status Active
Operating system Microsoft Windows
Platform IA-32
Size 34 MB (SRIM-2013 Professional)
Available in English
Type Computational physics
License Freeware
Website srim.org

Stopping and Range of Ions in Matter (SRIM) is a group of computer programs which calculate interaction of ions with matter; the core of SRIM is a program Transport of ions in matter (TRIM). SRIM is very popular in the ion implantation research and technology community and also used widely in other branches of radiation material science. The programs were developed by James F. Ziegler and Jochen P. Biersack around 1983 [1][2] and are being continuously upgraded with the major changes occurring approximately every five years.[3] SRIM is based on a Monte Carlo simulation method, namely the binary collision approximation [4][5][6] with a random selection of the impact parameter of the next colliding ion. As the input parameters, it needs the ion type and energy (in the range 10 eV – 2 GeV) and the material of one or several target layers. As the output, it lists or plots

The programs are made so they can be interrupted at any time, and then resumed later. They have a very easy-to-use user interface and built-in default parameters for all ions and materials. Another part of the software allows calculating the electronic stopping power of any ion in any material (including gaseous targets) based on an averaging parametrization of a vast range of experimental data.[2] Those features made SRIM immensely popular. However, it doesn't take account of the crystal structure nor dynamic composition changes in the material that severely limits its usefulness in some cases.

Other approximations of the program include

SRIM originated in 1980 as a DOS based program then called TRIM.[1] The DOS version was upgraded until 1998 and is still available for download. It will run on a Unix PC having a DOS emulator. SRIM-2000 requires a computer with any Windows operating system. The program may work with Unix or Macintosh based systems through Wine.[17][18]

Further reading

See also

References

  1. 1 2 J. P. Biersack and L. G. Haggmark. A Monte Carlo computer program for the transport of energetic ions in amorphous targets. Nucl. Instr. Meth., 174:257, 1980
  2. 1 2 3 4 J. F. Ziegler, J. P. Biersack, and U. Littmark. The Stopping and Range of Ions in Matter. Pergamon, New York, 1985.
  3. "Particle interactions with matter". Retrieved 17 August 2014.
  4. M. T. Robinson and Ian M. Torrens. Computer simulation of atomic-displacement cascades in solids in the binary-collision approximation. Phys. Rev. B, 9(12):5008, 1974.
  5. Gary Was. Fundamentals of Radiation Materials Science. Springer, 2012.
  6. R. Smith (ed.). Atomic & ion collisions in solids and at surfaces: theory, simulation and applications. Cambridge University Press, Cambridge, UK, 1997
  7. M. T. Robinson and O. S. Oen. The channeling of energetic atoms in crystal lattices. Appl. Phys. Lett., 2(4):30, 1963.
  8. R. S. Averback and T. Diaz de la Rubia. Displacement damage in irradiated metals and semiconductors. In H. Ehrenfest and F. Spaepen, editors, Solid State Physics, volume 51, pages 281--402. Academic Press, New York, 1998.
  9. K. Nordlund, M. Ghaly, R. S. Averback, M. Caturla, T. Diaz de la Rubia, and J. Tarus. Defect production in collision cascades in elemental semiconductors and fcc metals. Phys. Rev. B, 57(13):7556--7570, 1998
  10. P. Partyka, Y. Zhong, K. Nordlund, R. S. Averback, I. K. Robinson, and P. Ehrhart. Grazing incidence diffuse x-ray scattering investigation of the properties of irradiation-induced point defects in silicon. Phys. Rev. B, 64:235207, 2002.
  11. M. A. Kirk, I. M. Robertson, M. L. Jenkins, C. A. English, T. J. Black, and J. S. Vetrano. The collapse of defect cascades to dislocation loops. J. Nucl. Mater., 149:21, 1987.
  12. M. O. Ruault, J. Chaumont, J. M. Penisson, and A. Bourret. High resolution and in situ investigation of defects in Bi-irradiated Si Phil. Mag. A, 50(5):667, 1984.
  13. Vaziri, M R R. "Microscopic description of the thermalization process during pulsed laser deposition of aluminium in the presence of argon background gas". Journal of Physics D: Applied Physics. 43: 425205. doi:10.1088/0022-3727/43/42/425205.
  14. K. O. E. Henriksson, K. Vörtler, S. Dreissigacker, K. Nordlund, and J. Keinonen. Sticking of atomic hydrogen on the tungsten (001) surface. Surf. Sci., 600:3167--3174, 2006
  15. C. Hopf, A. von Keudell, and W. Jacob. Chemical sputtering of hydrocarbon films.J. Appl. Phys., 94(4):2373, 2003
  16. P. Vajda. Anisotropy of electron radiation damage in metal crystals. Rev. Mod. Phys., 49:481, 1977.
  17. SRIM plus Linux over Wine (SRIM+(LINUX/WINE))
  18. SRIM Wine Page @WineHQ
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