List of semiconductor fabrication plants
This list is incomplete; you can help by expanding it.
This is a list of semiconductor fabrication plants:
Company | Site name | Location | Plant start-up cost (in US$ billions) | Starting of production | Wafer size (in mm) | Process technology node (in nm) | Wafer production capacity/month | Technology/products | MES | EI |
---|---|---|---|---|---|---|---|---|---|---|
XMC | China Wuhan | 300 | NAND, NOR and CMOS image sensor | |||||||
ISRO | SCL | India, Chandigarh | 200 | 180 | MEMS, CMOS, CCD, N.S. | |||||
DongbuHitek | Fab1 | South Korea, Buchoen | 200 | 150~350 | Analog & Power, Mixed Signal, HV CMOS | |||||
DongbuHiTek | Fab2 | South Korea, Eumsung, | 200 | 90–350 | Analog & Power, Mixed-Signal, NVM, CIS, High Voltage CMOS, eFlash, sFlash | |||||
Silterra | Fab1 | Malaysia, Kedah, Kulim | 1.6 | 2000 | 200 | 90–180 | 28,000–30,000 | CMOS/HV/MEMS/RF/Logic/Analog/Mix Signal | MES | EI |
Microchip | Fab 2 | USA, AZ, Tempe | 1994 | 200 | ||||||
Microchip | Fab 4 | USA, OR, Gresham | 2004 | 200 | ||||||
Nanya | Fab | Taiwan | 199x | 300 | DRAM | |||||
Intel | D1D[1][2] | USA, OR, Hillsboro | 2003 | 300 | 14 / 22 | Microprocessors[3] | ||||
Intel | D1C[1][2] | USA, OR, Hillsboro | 2001 | 300 | 14 / 22 / 32 | Microprocessors[3] | ||||
Intel | D1X[4][2] | USA, OR, Hillsboro | 2013 | 300 | 14 | Microprocessors[3] | ||||
Intel | Fab 12[1][2] | USA, AZ, Chandler | 1996 | 300 | 22 / 65 | Microprocessors & Chipsets[3] | ||||
Intel | Fab 32[1][5] | USA, AZ, Chandler | 3 | 2007 | 300 | 45 | ||||
Intel | Fab 32[1][2] | USA, AZ, Chandler | 2007 | 300 | 22 / 32 | Microprocessors[3] | ||||
Intel | Fab 42[6][7] [2] | USA, AZ, Chandler | 5 | 2013 (plan), not started[8] | 300 | 14 | Microprocessors[3] | |||
Intel | Fab 11x[1][2] | USA, NM, Rio Rancho | 2002 | 300 | 32 / 45 | Microprocessors[3] | ||||
Intel | Fab 17[1][2] | USA, MA, Hudson | 1998–2014 (closed) | 200 | 130 | Chipsets and other[3] | ||||
Intel | Fab 8[9] | Israel, Jerusalem | 1985–2007 (closed) | 150 | Microprocessors, Chipsets, Microcontrollers[10] | |||||
Intel | Fab 18[11] | Israel, Kiryat Gat | 1996 | 200 | 65 | Microprocessors and chipsets[12] | ||||
Intel | Fab 10[1] | Ireland, Leixlip | 1994 | 200 | ||||||
Intel | Fab 14[1] | Ireland, Leixlip | 1998 | 200 | ||||||
Intel | Fab 24[1][2] | Ireland, Leixlip | 2004 | 300 | 14 / 65 / 90[13] | Microprocessors, Chipsets and Comms[3] | ||||
Intel | Fab 28[1][2] | Israel, Kiryat Gat | 2008 | 300 | 22 / 45 | Microprocessors[3] | ||||
Intel | Fab 68[1][14] | China, Dalian | 2.5 | 2010 | 300 | 65[15] | VNAND[3] | |||
Maxim | San Antonio[16] | USA, TX, San Antonio | 2003 | 200 | ||||||
Maxim | X3[17] | USA, CA, San Jose | ||||||||
Maxim | MaxFabNorth[18] | USA, OR, Beaverton | ||||||||
Mikron | Russia, Zelenograd | 90 | Elbrus microprocessors, others. | |||||||
VSP Mikron | WaferFab[19] | Russia, Voronezh | 1959 | 100/150 | 900+ | 6000 | Analog, power | |||
Motorola | MOTOFAB1[20] | Mexico, Guadalajara | 2002 | |||||||
Micron | Fab 6 | USA, Virginia, Manassas | 300 | 25[21] | DRAM, NAND FLASH, NOR | |||||
Micron | Fab 4 [22] | USA, ID, Boise | 300 | RnD | ||||||
Micron | Fab 13 [23] | Singapore, Singapore | 200 | NOR | ||||||
Micron | Fab 10 [24] | Singapore, Singapore | 300 | NAND FLASH | ||||||
Micron | Fab 7 (Formerly TECH Semiconductor, Singapore)[25] | Singapore, Singapore | 300 | NAND FLASH | ||||||
Micron | Fab 15 (Formerly Elpida Memory, Hiroshima)[26] | Japan, Hiroshima | 300 | 20 and under | DRAM | |||||
Micron | Fab 16 (Formerly Rexchip, Taichung)[27] | Taiwan, Taichung | 300 | 30 and under | DRAM | |||||
Inotera | Fab 11 (Taoyuan)[28] | Taiwan, Taoyuan | 300 | 20 and under | DRAM | |||||
GlobalFoundries | Fab 9 | USA, VT, Essex Junction | 200 | 90–350 | 40,000 | |||||
GlobalFoundries | Fab 10 | USA, NY, East Fishkill | 2.5 | 2002 | 300 | 22–90 | 14,000 | |||
GlobalFoundries | Fab 1[29] | Germany, Dresden | 2.5 | 2005 | 300 | 28–45 | 80,000 | |||
GlobalFoundries | Fab 7[30] | Singapore | 300 | 40–130 | 50,000 | |||||
GlobalFoundries | Fab 8[31] | USA, NY, Malta | 4.6 | 2012 | 300 | 14–22–28 | 60,000 | |||
GlobalFoundries | Fab 2[32] | Singapore | 200 | 350–600 | 50,000 | |||||
GlobalFoundries | Fab 3/5[33] | Singapore | 200 | 180–350 | 54,000 | |||||
GlobalFoundries | Fab 3E[34] | Singapore | 200 | 180 | 34,000 | |||||
GlobalFoundries | Fab 6[35] | Singapore | 200 | 110–180 | 45,000 | |||||
Toshiba/SanDisk | 800 Yamanoisshikicho, Yokkaichi, Mie, Japan[36] | 1992 | Flash | |||||||
Toshiba/SanDisk | Fab 5[36] | Japan, Mie | 2011 | 300 | 15[37] | Flash | ||||
TSMC | Fab 2[38] | Taiwan, Hsinchu | 150 | |||||||
TSMC | Fab 3 | Taiwan, Hsinchu | 200 | |||||||
TSMC | Fab 5 | Taiwan, Hsinchu | 200 | |||||||
TSMC | Fab 6 | Taiwan, Tainan | 200 | |||||||
TSMC | Fab 8 | Taiwan, Hsinchu | 200 | |||||||
TSMC | Fab 10 | China, Shanghai | 200 | |||||||
TSMC | Fab 12 | Taiwan, Hsinchu | 300 | 28 | ||||||
TSMC | Fab 12(P4) | Taiwan, Hsinchu | 300 | 20 | ||||||
TSMC | Fab 12(P6) | Taiwan, Hsinchu | 300 | 16 | ||||||
TSMC | Fab 12(P7) | Taiwan, Hsinchu | Future | 300 | 16 | |||||
TSMC | Fab 14 | Taiwan, Tainan | 300 | 20 | ||||||
TSMC | Fab 14(B) | Taiwan, Tainan | 300 | 16 | ||||||
TSMC WaferTech | Fab 11 | USA, WA, Camas | 200 | |||||||
TSMC | Fab 15[39] | Taiwan, Taichung | 2011Q4 | 300 | 20 | |||||
TSMC | Fab 15(B) | Taiwan, Taichung | Future | 300 | 10 | |||||
UMC | Fab 6A | Taiwan, Hsinchu | 150 | |||||||
UMC | Fab 8AB | Taiwan, Hsinchu | 200 | |||||||
UMC | Fab 8C | Taiwan, Hsinchu | 200 | |||||||
UMC | Fab 8D | Taiwan, Hsinchu | 200 | |||||||
UMC | Fab 8E | Taiwan, Hsinchu | 200 | |||||||
UMC | Fab 8F | Taiwan, Hsinchu | 200 | |||||||
UMC | Fab 8S | Taiwan, Hsinchu | 200 | |||||||
UMC | Fab 12A | Taiwan, Tainan | 300 | 55,000 | ||||||
UMC | Fab 12i | Singapore | 300 | 45,000 | ||||||
Vanguard International Semiconductor Corporation | Fab 1 | Taiwan, Hsinchu | 200 | |||||||
Vanguard International Semiconductor Corporation | Fab 2 | Taiwan, Hsinchu | 200 | |||||||
IM Flash | IM Flash[40] | Singapore | 2011-04 | 300 | 25 | |||||
IM Flash | IM Flash | USA, UT, Lehi | 300 | 20 | ||||||
IM Flash | IM Flash | USA, VA, Manassas | ||||||||
NXP Semiconductors | ATMC[41] | USA, TX, Austin | 1995 | 200 | 90 | |||||
NXP Semiconductors | Chandler Fab[42] | USA, AZ, Chandler | 1.1[43] | 1993 | 200 | 180 | ||||
NXP Semiconductors | Oak Hill Fab[44] | USA, TX, Austin | .8[45] | 1991 | 200 | 250 | ||||
NXP Semiconductors | DHAM[46] | Germany, Hamburg | ||||||||
NXP Semiconductors | China, Jilin | |||||||||
NXP Semiconductors | UK, Manchester | |||||||||
NXP Semiconductors | ICN8 | Netherlands, Nijmegen | ||||||||
NXP Semiconductors | SSMC | Singapore | ||||||||
Altis Semiconductor | ACL-AMF | France, Corbeil-Essonnes | 1991 | 200 | 130–350 | |||||
LFoundry (previously owned by Micron)[47] | Italy, Avezzano | 1995 | 200 | 90–150 | 40.000 | |||||
LFoundry (closed in 2011, previously owned by Renesas Electronics[48] | Germany, Landshut | 200 | ||||||||
LFoundry (closed in 2014 and previously owned by Atmel)[49] | France, Rousset | 200 | 25.000[50] | |||||||
Incard - a STMicroelectronics subsidiary | Fab for Smart Cards and SIM cards only[51] | Italy, Marcianise | ||||||||
STMicroelectronics | AMK8 (second, newer fab) | Singapore, Ang Mo Kio | 1995 | 200 | ||||||
STMicroelectronics | AMJ9 (first fab, initially owned by SGS Microelettronica) | Singapore, Ang Mo Kio | 1984[52] | 150 | ||||||
STMicroelectronics | Crolles 1 / Crolles 200 | France, Crolles | 1993 | 200 | ||||||
STMicroelectronics | Crolles2 / Crolles 300 | France, Crolles | 2003 | 300 | 90 | |||||
STMicroelectronics | Crolles2 / Crolles 300 | France, Crolles | 300 | 65 | ||||||
STMicroelectronics | Crolles2 / Crolles 300 | France, Crolles | 300 | 45 | ||||||
STMicroelectronics | Crolles2 / Crolles 300 | France, Crolles | 300 | 32 | ||||||
STMicroelectronics | Tours | France, Tours | 200 | |||||||
STMicroelectronics | R2 (upgraded in 2001 from R1) | Italy, Agrate Brianza | 1963 as SGS-ATES | 200 | ||||||
STMicroelectronics | AG8/AGM | Italy, Agrate Brianza | 1963 as SGS-ATES | 200 | ||||||
STMicroelectronics | Catania | Italy, Catania | 1997 | 200 | ||||||
STMicroelectronics | Rousset | France, Rousset | 2000 | 200 | ||||||
SUNY Poly CNSE | NanoFab 300 North[53] | USA, NY, Albany | .175 | 2005 | 300 | 65 | ||||
SUNY Poly CNSE | NanoFab 300 North[53] | USA, NY, Albany | 300 | 45 | ||||||
SUNY Poly CNSE | NanoFab 300 North[53] | USA, NY, Albany | 300 | 32 | ||||||
SUNY Poly CNSE | NanoFab 300 North[53] | USA, NY, Albany | 300 | 22 | ||||||
SUNY Poly CNSE | NanoFab 300 South[53] | USA, NY, Albany | .050 | 2004 | 300 | 22 | ||||
SUNY Poly CNSE | NanoFab 200 [54] | USA, NY, Albany | .016 | 1997 | 200 | |||||
SUNY Poly CNSE | NanoFab Central [53] | USA, NY, Albany | .150 | 2009 | 300 | 22 | ||||
Powerchip Semiconductor | Memory Foundry[55] | Taiwan, Hsinchu | 300 | 90 | ||||||
Powerchip Semiconductor | Memory Foundry[55] | Taiwan, Hsinchu | 300 | 70 | ||||||
Fairchild Semiconductor | Now ONSEMI | USA, PA, Mountain Top | 1997/1960 | 200 | 350 | |||||
Fairchild Semiconductor | Now ONSEMI | USA, ME, South Portland | 1997/1960 | 200 | 350 | |||||
SMIC | S1 Mega Fab[56] | China, Shanghai | 200 | 90 | ||||||
SMIC | S1 Mega Fab[56] | China, Shanghai | 200 | 350 | ||||||
SMIC | S1 Mega Fab[56] | China, Shanghai | 200 | 90 | ||||||
SMIC | S2[56] | China, Shanghai | 300 | 40/45 | ||||||
SMIC | B1 Mega Fab[56] | China, Beijing | 2004 | 300 | 130 | |||||
SMIC | B1 Mega Fab[56] | China, Beijing | 2004 | 300 | 55/65 | |||||
SMIC | Fab 7[56] | China, Tianjin | 2004 | 200 | 350 | |||||
SMIC | Fab 7[56] | China, Tianjin | 200 | 130 | ||||||
Winbond | Memory Product Foundry[57] | Taiwan, Taichung | 300 | 46 | ||||||
Winbond | Memory Product Foundry[57] | Taiwan, Taichung | 300 | 3x | ||||||
MagnaChip | F-5[58] | South Korea, Cheongju | 2005 | 200 | 130 | |||||
ProMOS | Fab 4[59][60] | Taiwan, Taichung | 1.6 | 300 | 70 | |||||
TSI Semiconductors LLC | Heilbronn | Germany, Heilbronn | 150 | 10,000 | ||||||
TSI Semiconductors LLC[61] | Roseville fab[62] | USA, CA, Roseville | 200 | |||||||
Hynix | M7[63] | South Korea, Icheon | 200 | |||||||
Hynix | M8[63] | South Korea, Cheongju | 200 | |||||||
Hynix | M9[63] | South Korea, Cheongju | 200 | |||||||
Hynix | E1[63] | USA, OR, Eugene | 200 | |||||||
Hynix | HC1[63] | China, Wuxi | 200 | |||||||
Fujitsu | Fab No. 1[64] | 1500 Tadocho Mizono, Kuwana, Mie, Japan[65] | 2005 | 300 | 65 | 15,000 | ||||
Fujitsu | Fab No. 1[64] | Japan, Mie | 2005 | 300 | 90 | 15,000 | ||||
Fujitsu | Fab No. 2[64] | Japan, Mie | 2007 | 300 | 65 | 25,000 | ||||
Fujitsu | Fab No. 2[64] | Japan, Mie | 2007 | 300 | 90 | 25,000 | ||||
Cypress Semiconductor | Minnesota fab | USA, MN, Bloomington | 65 | |||||||
Cypress Semiconductor | Minnesota fab | USA, MN, Bloomington | 90 | |||||||
Cypress Semiconductor | Minnesota fab | USA, MN, Bloomington | 130 | |||||||
Cypress Semiconductor | Minnesota fab | USA, MN, Bloomington | 180 | |||||||
Cypress Semiconductor | Minnesota fab | USA, MN, Bloomington | 250 | |||||||
Cypress Semiconductor | Fab25 | USA, TX, Austin | 1994 | 200 | Flash / Logic | |||||
Cypress Semiconductor | Minnesota fab | USA, MN, Bloomington | 1991 | 350 | ||||||
ON Semiconductor | Gresham[66] | USA, OR, Gresham | 200 | 110 | ||||||
ON Semiconductor (former AMI Semiconductor) | Pocatello[67] | USA, ID, Pocatello | 200 | 350 | ||||||
ON Semiconductor | Oudenaarde | Belgium, Oudenaarde | 150 | 350 | 4,000 | |||||
ON Semiconductor | ISMF | Malaysia, Seremban | 150 | 350 | 80,000 | Discrete | ||||
ON Semiconductor | Niigata | Japan, Niigata | 150 | 350 | ||||||
ON Semiconductor | Roznov | Czech Republic, Roznov | 150 | 5000 | ||||||
Texas Instruments (former National Semiconductor) | South Portland[68] | USA, ME, South Portland | .932 | 1997 | 350 | |||||
Texas Instruments (former National Semiconductor) | South Portland[68] | USA, ME, South Portland | 250 | |||||||
Texas Instruments (former National Semiconductor) | South Portland[68] | USA, ME, South Portland | 180 | |||||||
Fairchild Semiconductor (former National Semiconductor) | West Jordan | USA, UT, West Jordan | 1977 | 150 | Closed 2015[69] | |||||
Texas Instruments (former National Semiconductor) | Arlington | USA, TX, Arlington | 1985 | 150 | Closed 2010 | |||||
Samsung | Line-16[70] | South Korea, Hwaseong | 10.2 | 2011 | 300 | 20 | ||||
Samsung | S2[71] | USA, TX, Austin | 2011 | 300 | 14 | 40,000 | ||||
TowerJazz | Fab 1[72] | Israel, Migdal Haemek | 1989 | |||||||
TowerJazz | Fab 2[72] | Israel, Migdal Haemek | 2003 | |||||||
TowerJazz | Fab 3[72] | USA, CA, Newport Beach | 1967 | 130–500 | ||||||
TowerJazz | Fab 4 (Closed)[72] | Japan, Nishiwaki City | ||||||||
TowerJazz – TPSCo | Fab 5 [72] | Japan, Tonami | 200 | |||||||
TowerJazz – TPSCo | Fab 7 [72] | Japan, Uozo | 200 | |||||||
TowerJazz – TPSCo | Fab 6 [72] | Japan, Arai | 300 | |||||||
Texas Instruments | FFAB | Germany, Freising | 200 | |||||||
Texas Instruments | MFAB | USA, ME | 200 | |||||||
Texas Instruments | RFAB | USA, TX, Richardson | 300 | |||||||
Texas Instruments | DMOS6 | USA, TX, Dallas | 300 | |||||||
Texas Instruments | DMOS5 | USA, TX, Dallas | 200 | |||||||
Texas Instruments | DFAB | USA, TX, Dallas | 150/200 | |||||||
Texas Instruments | SFAB | USA, TX, Sherman | 150 | |||||||
Texas Instruments | GFAB | UK, Scotland, Greenock | 150/200 | 40,000 | ||||||
Texas Instruments | MIHO8 | Japan, Miho | 200 | |||||||
Texas Instruments | Aizu | Japan, Aizu | 200 | |||||||
Texas Instruments | Chengdu | China, Chengdu | 200 | |||||||
General Motors Components Holdings | Fab III | USA, IN, Kokomo | 125/200 | 500+ | ||||||
Infineon Technologies | Villach | Austria, Villach | 1970[73] | 150/200/300 | ||||||
Infineon Technologies | Dresden | Germany, Dresden | 1994, refurnished 2011[74] | 200/300 | 90 | |||||
Infineon Technologies | Kulim[75] | Malaysia, Kulim | 2006[76] | 200/300 | ||||||
Infineon Technologies | Kulim 2 | Malaysia, Kulim | 2015 | 200/300 | ||||||
Infineon Technologies | Regensburg[77] | Germany, Regensburg | 1959 | |||||||
Bosch | Germany, Reutlingen | 1995[78] | 150 | ASIC, analog, power | ||||||
Bosch | WaferFab | Germany, Reutlingen | 2010[78] | 200 | 30,000 | ASIC, analog, power, MEMS | ||||
Analog Devices | WaferFab | Ireland, Limerick | ||||||||
Analog Devices | WaferFab | USA, MA, Wilmington | ||||||||
X-Fab | Erfurt | Germany, Erfurt | 200[79] | 600–1000[79] | 11200–[79] | |||||
X-Fab | Dresden | Germany, Dresden | 200[80] | 350–1000[80] | 6000–[80] | |||||
X-Fab | Itzehoe | Germany, Itzehoe | 200[81] | 13000–[81] | MEMS | |||||
X-Fab | Kuching | Malaysia, Kuching | 200[82] | 130–350[82] | 27000–[82] | |||||
X-Fab | Lubbock | USA, TX, Lubbock | 200[83] | 600–1000[83] | 15000–[83] | |||||
Teledyne DALSA | Teledyne DALSA Semiconductor | Bromont, QC, Canada | 1980 | 150/200 | HV ASICs, HV CMOS, MEMS, CCD | |||||
Unitec Blue[84] | Chascomús, Argentina | 1.2[85] | ||||||||
ams[86] | FAB B | Austria, Unterpremstaetten | 200 | 350 | ||||||
Diodes Incorporated[87] | OFAB | UK, Oldham | 150 | |||||||
Diodes Incorporated[88] | KFAB | USA, MO, Lee's Summit | ||||||||
Polar Semitconductor LLC[89] | FAB1 | USA, MN, Bloomington | 150 | BCD, HV | ||||||
Polar Semitconductor LLC[90] | FAB2 | USA, MN, Bloomington | 200 | BCD, HV, GMR | ||||||
Older fabs that closed :
Company name | Plant name | Plant location | Plant cost (in US$ billions) | Starting production | Wafer size (in mm) | Process technology node (in nm) | Wafer production capacity/month | Ending production |
---|---|---|---|---|---|---|---|---|
EI Niš | Ei Poluprovodnici | Serbia, Niš | 1962 | 100 | 2000 | |||
Freescale Semiconductor | Toulouse Fab[91] | France, Toulouse | 1969 | 150 | 650 | 2012[92] | ||
Freescale Semiconductor | Sendai Fab[93] | Japan, Sendai | 1987 | 150 | 500 | |||
Texas Instruments | HFAB | USA, TX, Houston | 150 | 2012[94] | ||||
See also
References
- 1 2 3 4 5 6 7 8 9 10 11 12 "Moore's Law Around the World, in Bricks and Mortar". 2010-10-21. Archived from the original on July 13, 2011.
- 1 2 3 4 5 6 7 8 9 10 Intel Global Manufacturing Facts, 2011
- 1 2 3 4 5 6 7 8 9 10 11 http://download.intel.com/newsroom/kits/22nm/pdfs/Global-Intel-Manufacturing_FactSheet.pdf
- ↑
- ↑ Intels $3 Billion Fab Now Open for Business
- ↑ Intel to Invest More than $5 Billion to Build New Factory in Arizona
- ↑ Swartz, Jon (2011-03-29). "Intel's new $5 billion plant in Arizona has Obama's blessing". www.usatoday.com. Retrieved 2011-03-28.
- ↑ Intel shelves delayed Fab 42 facility // Bit-tech, 2014-01-15 "Intel's Chuck Mulloy confirmed that the facility will be 'left vacant for now' .. has not yet been outfitted with fabrication equipment - 'the actual tools, the expensive stuff, are not in there,' "
- ↑
- ↑
- ↑
- ↑
- ↑ "INTEL Ireland Fab 24 NOW Recruiting - CareersPortal.ie". www.careersportal.ie. Retrieved 2015-10-20.
- ↑ Intel Opens $2.5 Billion Fab Plant in China
- ↑ "Intel in Dalian, China". Intel. Retrieved 2016-08-04.
- ↑
- ↑
- ↑
- ↑
- ↑ Motorola Plant Reference in a book
- ↑ "Company Spotlight: Micron Technology, Inc." SemiAccurate. 2010-12-30. Retrieved 2014-10-02
- ↑
- ↑
- ↑
- ↑
- ↑
- ↑
- ↑
- ↑
- ↑
- ↑
- ↑
- ↑
- ↑
- ↑
- 1 2 Toshiba and SanDisk Celebrate the Opening of Fab 5 300mm NAND Flash Memory Fabrication Facility in Japan
- ↑ "Toshiba and SanDisk Celebrate the Opening of the Second Phase of Fab 5 and Start Construction of the New Fab 2 Semiconductor Fabrication Facility at Yokkaichi, Japan". www.sandisk.com. Retrieved 2015-10-20.
- ↑ "Fab Locations". Taiwan Semiconductor Manufacturing Company Limited. Retrieved 2012-04-21.
- ↑ "TSMC Acquires PSC Land for New Fab Construction". Taiwan Economic News. 2011-01-13. Retrieved 2011-01-13.
- ↑ "Intel, Micron open US$3 billion NAND flash facility in Singapore". DigiTimes. 2011-04-11. Retrieved 2011-04-11.
- ↑ Freescale Austin Technology & Manufacturing Center
- ↑ Freescale Chandler Fab
- ↑ "Motorola Restarts MOS 12 Facility Expansion". Electronic News. 1999. Retrieved 2011-10-06.
- ↑ Freescale Oak Hill Fab
- ↑ "R & D Collaboration on Trial: The Microelectronics and Computer Technology Corporation". Harvard Business School Press. 1994. Retrieved 2011-10-06.
- ↑ About NXP
- ↑ http://www.appliedmaterials.com/nanochip/nanochip-fab-solutions/april-2014/lfoundry-new-frontiers-new-opportunities
- ↑ http://www.eetimes.com/document.asp?doc_id=1260582
- ↑ http://www.electronics-eetimes.com/news/lfoundry-rousset-fab-closes-loss-600-jobs
- ↑ http://www.electronics-eetimes.com/news/lfoundry-rousset-fab-closes-loss-600-jobs/page/0/1
- ↑ http://www.gsma.com/membership/stmicroelectronics-srl-incard-division/
- ↑ https://books.google.com/books?id=ZgfyCwAAQBAJ&lpg=PA120&dq=The%20Singapore%20Research%20Story&pg=PA23#v=snippet&q=sgs&f=false
- 1 2 3 4 5 6 300mm Wafer Fabrication
- ↑ 200mm Wafer Fabrication
- 1 2 Foundry Services
- 1 2 3 4 5 6 7 8 SMIC's Fabs
- 1 2 Memory Product Foundry
- ↑ MagnaChip ups capex, tips 130-nm process
- ↑ "ProMOS Goes for 70nm DRAM". SOFTPEDIA. 2007-08-13. Retrieved 2011-05-27.
- ↑ "Record fab construction reached in second quarter, says report". EE Times. 2004-07-02. Retrieved 2011-05-31.
- ↑ Anderson, Mark. "Telefunken no more: Company changes name to TSI Semiconductors". www.bizjournals.com. Sacramento Business Journal. Retrieved 2014-06-30.
- ↑ "Renesas sells U.S. fab to Telefunken". EE Times. 2011-03-30. Retrieved 2011-05-31.
- 1 2 3 4 5 Hynix to Accelerate Retirement of 200mm Fabrication Plants
- 1 2 3 4 Fujitsu to Construct New Fab for Logic Chips Employing 65nm Process Technology and 300mm Wafers
- ↑ Home > Worldwide > Japan (HQ) > Plants
- ↑ Gresham, USA
- ↑ Pocatello, USA
- 1 2 3 South Portland, Maine
- ↑ Harry, Stevens. "Fairchild Semiconductor to close Utah facility amid job cuts". The Salt Lake Tribune. Retrieved October 17, 2016.
- ↑ "SAMSUNG BEGINS OPERATION OF WORLD'S LARGEST MEMORY FAB". Samsung Village. 2011-09-22. Retrieved 2011-10-06.
- ↑ "Samsung's Austin Logic Line Breaks Record Achievements". Samsung. 2011-12-05. Retrieved 2012-05-18.
- 1 2 3 4 5 6 7 TowerJazz Manufacturing
- ↑ http://www.infineon.com/export/sites/default/media/regions/at/brochures/Infineon_Technologies_Austria_AG_Imagebroschuere_English.pdf
- ↑ http://www.infineon.com/dgdl/IFD+_Broschuere2012.pdf?folderId=db3a3043134f57b0011352cc4bc20107&fileId=db3a304314dca3890115046d8cd00c33
- ↑ http://www.infineon.com/cms/en/corporate/career/our-sites/country/malaysia/kulim/index.html
- ↑ http://www.eetimes.com/electronics-news/4064841/Infineon-launches-Kulim-fab
- ↑ http://www.infineon.com/dgdl/Rbg_d.pdf?folderId=db3a304412b91b910112baab5ed71fb4&fileId=db3a304412b91b910112baad8075224a
- 1 2 http://www.bosch-career.de/de/technikvision/download/Factsheet_WaferFab%20Reutlingen.pdf
- 1 2 3 http://www.xfab.com/about-x-fab/corporate-overview/locations/germany-headquarters-single/
- 1 2 3 http://www.xfab.com/about-x-fab/corporate-overview/locations/germany-dresden-single/
- 1 2 http://www.xfab.com/about-x-fab/corporate-overview/locations/germany-itzehoe-single/
- 1 2 3 http://www.xfab.com/about-x-fab/corporate-overview/locations/malaysia-single/
- 1 2 3 http://www.xfab.com/about-x-fab/corporate-overview/locations/usa-texas-single/
- ↑ http://www.unitecblue.com.ar/planta.html
- ↑ Luciana Magalhaes. "Corporación América Buying Batista's Stake in SIX: Argentine Firm Buying 33% Stake in SIX Semicondutores". The Wall Street Journal.
- ↑ http://www.ams.com
- ↑ http://www.diodes.com
- ↑ http://www.diodes.com
- ↑ http://www.polarsemi.com
- ↑ http://www.polarsemi.com
- ↑ Freescale Toulouse Fab
- ↑ http://www.eetimes.com/document.asp?doc_id=1262319
- ↑ Freescale Sendai Fab
- ↑ http://newscenter.ti.com/index.php?s=32851&item=123114
External links
- The IC Foundry Almanac. 2009 edition. Section III: IC Foundry providers| // IC Insights, Global Semiconductor Alliance, 2009
- Memory and Foundry Account For More Than Half of Worldwide IC Capacity // IC Insights, Global Semiconductor Alliance, 2013-07-09
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